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参数资料
| 型号： | IRH7450SE |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=11A) |
| 中文描述： | 晶体管N沟道（BVdss \u003d 500V及的Rds（on）\u003d 0.51ohm，身份证\u003d 11A条） |
| 文件页数： | 3/4页 |
| 文件大小： | 146K |
| 代理商： | IRH7450SE |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
400
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
400
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
27
8
—
—
—
15
—
—
—
133
8
—
—
—
3
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~35
V
DS
Bias
(V)
400
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
500
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
IRH7450SE Device
Radiation Characteristics
Table 1. Low Dose Rate
Parameter
IRH7450SE
100K Rads (Si)
min.
500
2.5
—
—
—
—
Units
Test Conditions
max.
—
4.5
100
-100
50
0.51
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
=7A
nA
μ
A
V
SD
—
1.6
V
TC = 25°C, IS = 11A,V
GS
= 0V
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1. The val-
ues in Table 1 will be met for either of the two low
dose rate test circuits that are used. Both pre- and
post-radiation performance are tested and specified
using the same drive circuitry and test conditions in
order to provide a direct comparison. It should be
noted that at a radiation level of 1 x 10
5
Rads (Si),
no change in limits are specified in DC parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
To Order
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