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参数资料
| 型号： | IRH9150 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) |
| 中文描述： | 抗辐射功率MOSFET的通孔（T0代- 204AE） |
| 文件页数： | 1/9页 |
| 文件大小： | 121K |
| 代理商： | IRH9150 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
-22
-14
-88
150
1.2
±20
500
-22
1.5
-23
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AE)
02/18/03
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRH9150 100K Rads (Si)
IRH93150 300K Rads (Si)
0.075
-22A
0.075
-22A
For footnotes refer to the last page
IRH9150
100V, P-CHANNEL
HEXFET
RAD Hard
TECHNOLOGY
TO-204AE
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
PD - 90879C
相关PDF资料 |
PDF描述 |
|---|---|
| IRH93150 | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) |
| IRH9230 | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) |
| IRH9250 | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A) |
| IRHE9130 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| IRHF3130 | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRH9230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH9250 | 制造商:IRF 制造商全称:International Rectifier 功能描述:TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A) |
| IRH93130 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA) |
| IRH93150 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) |
| IRH93230 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package |
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