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参数资料
| 型号： | IRHE9130 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗辐射功率MOSFET表面贴装（持有LCC - 18） |
| 文件页数： | 1/8页 |
| 文件大小： | 123K |
| 代理商： | IRHE9130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
-6.5
-4.1
-26
25
0.2
±20
165
-6.5
2.5
-22
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
0.42 (Typical)
g
PD - 90881C
Pre-Irradiation
International Rectifier’s RAD-Hard
TM
HEXFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low Rdson and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
MOSFET
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
2/20/03
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHE9130 100K Rads (Si)
IRHE93130 300K Rads (Si)
I
D
QPL Part Number
JANSR2N7389U
JANSF2N7389U
0.30
0.30
-6.5A
-6.5A
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
For footnotes refer to the last page
LCC - 18
IRHE9130
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard
MOSFET TECHNOLOGY
HEXFET
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHE9230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHE93110 | 制造商:IRF 制造商全称:International Rectifier 功能描述:POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18) |
| IRHE93130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHE93230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF130 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
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