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参数资料
| 型号： | IRHE9130 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗辐射功率MOSFET表面贴装（持有LCC - 18） |
| 文件页数： | 8/8页 |
| 文件大小： | 123K |
| 代理商： | IRHE9130 |
IRHE9130
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L= 7.8mH
Peak IL = -6.5A, VGS = -12V
ISD
≤
-6.5A, di/dt
≤
-430A/
μ
s,
VDD
≤
-100V, TJ
≤
150°C
Case Outline and Dimensions — LCC-18
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 02/03
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