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参数资料
| 型号： | IRHE9130 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| 中文描述： | 抗辐射功率MOSFET表面贴装（持有LCC - 18） |
| 文件页数： | 5/8页 |
| 文件大小： | 123K |
| 代理商： | IRHE9130 |
www.irf.com
5
Pre-Irradiation
IRHE9130
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
500
1000
1500
2000
-V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
0.2
1.0
1.8
2.6
3.4
4.2
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
°
0
10
20
30
40
50
60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
-6.5
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
-V , Drain-to-Source Voltage (V)
-
D
I
100us
1ms
10ms
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相关代理商/技术参数 |
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|---|---|
| IRHE9230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHE93110 | 制造商:IRF 制造商全称:International Rectifier 功能描述:POWER MOSFET 100V - P CHANNEL SURFACE MOUNT (LCC-18) |
| IRHE93130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHE93230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF130 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF |
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