参数资料
型号: IRHF8130
厂商: International Rectifier
元件分类: 功率晶体管
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 30V的N沟道的PowerTrench MOSFET的
文件页数: 1/12页
文件大小: 283K
代理商: IRHF8130
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
8.0
5.0
32
25
0.20
±20
130
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
8.0
2.5
5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
0.98 (Typical )
g
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
08/08/03
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
I
D
QPL Part Number
IRHF7130 100K Rads (Si)
0.18
IRHF3130 300K Rads (Si)
0.18
IRHF4130 600K Rads (Si)
0.18
IRHF8130 1000K Rads (Si) 0.18
8.0A
8.0A
8.0A
8.0A
JANSR2N7261
JANSF2N7261
JANSG2N7261
JANSH2N7261
For footnotes refer to the last page
IRHF7130
JANSR2N7261
100V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD Hard
HEXFET
TECHNOLOGY
TO-39
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
PD - 90653E
相关PDF资料
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IRHF9130 TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
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