- 您现在的位置：买卖IC网 > PDF目录384502 > IRH93150 (International Rectifier) RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) PDF资料下载
参数资料
| 型号： | IRH93150 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) |
| 中文描述： | 抗辐射功率MOSFET的通孔（T0代- 204AE） |
| 文件页数： | 2/9页 |
| 文件大小： | 121K |
| 代理商： | IRH93150 |
2
www.irf.com
IRH9150
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
-22
-88
-3.0
250
1.5
Test Conditions
—
—
—
—
—
V
nS
μC
T
j
= 25°C, IS = -22A, VGS = 0V
Tj = 25°C, IF = -22A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
RthCS
Case-to-Sink
Min Typ Max
—
—
—
—
—
0.12
Units
Test Conditions
0.83
30
—
°C/W
Typical socket mount
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown — -0.093
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
-100
Typ
—
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
-2.0
11
—
—
—
—
—
—
—
—
0.075
0.080
-4.0
—
-25
-250
VGS = -12V, ID = -14A
VGS = -12V, ID = -22A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -14A
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -22A
VDS = -50V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
200
35
48
40
150
100
190
— nH
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in.
from
Package) with Source wires internally
nC
VDD =-50V, ID = -22A
VGS =-12V, RG = 2.35
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
—
—
—
4300
1100
310
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
ns
μ
A
相关PDF资料 |
PDF描述 |
|---|---|
| IRH9230 | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) |
| IRH9250 | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A) |
| IRHE9130 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) |
| IRHF3130 | 30V N-Channel PowerTrench MOSFET |
| IRHF4130 | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRH93230 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package |
| IRH93250 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package |
| IRHD320CW40 | 功能描述:整流器 400 Volt 410 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| IRHE120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | LLCC |
| IRHE130 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | LLCC |
发布紧急采购，3分钟左右您将得到回复。