- 您现在的位置：买卖IC网 > PDF目录384502 > IRHF3130 (International Rectifier) 30V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | IRHF3130 |
| 厂商： | International Rectifier |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 3/12页 |
| 文件大小： | 283K |
| 代理商： | IRHF3130 |
www.irf.com
3
Radiation Characteristics
IRHF7130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 25 μA V
DS
=80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.18 — 0.24
V
GS
= 12V, I
D
=5.0A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.18 — 0.24
V
GS
= 12V, I
D
=5.0A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V
100K Rads(Si)
1
300 - 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHF7130, (JANSR2N7261)
2. Part number IRHF3130 (JANSF2N7261), IRHF4130 (JANSG2N7261), IRHF8130(, , JANSH2N7261)
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 8.0A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
Cu
28
285 43 100 100 100 80 60
Br
36.8
305 39 100 90 70 50 —
LET
Energy Range
V
DS(V)
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
V
Cu
Br
相关PDF资料 |
PDF描述 |
|---|---|
| IRHF4130 | 30V N-Channel PowerTrench MOSFET |
| IRHF8130 | 30V N-Channel PowerTrench MOSFET |
| IRHF53130 | 30V N-Channel PowerTrench MOSFET |
| IRHF57130 | 30V N-Channel PowerTrench MOSFET |
| IRHF54130 | 30V N-Channel PowerTrench MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHF3230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF3330SE | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF4110 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHF4110SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF4110SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
发布紧急采购，3分钟左右您将得到回复。