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参数资料
| 型号： | IRHF53130 |
| 厂商： | International Rectifier |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 5/8页 |
| 文件大小： | 113K |
| 代理商： | IRHF53130 |
www.irf.com
5
Pre-Irradiation
IRHF57130
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
11.7A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
0.0
0.5
V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHF57130 | 30V N-Channel PowerTrench MOSFET |
| IRHF54130 | 30V N-Channel PowerTrench MOSFET |
| IRHF58130 | 30V N-Channel PowerTrench MOSFET |
| IRHF9130 | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| IRHG3214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHF53130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53214SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF53230 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) |
| IRHF53230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF53234SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
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