- 您现在的位置：买卖IC网 > PDF目录384502 > IRHF54130 (International Rectifier) 30V N-Channel PowerTrench MOSFET PDF资料下载
参数资料
| 型号： | IRHF54130 |
| 厂商： | International Rectifier |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 3/8页 |
| 文件大小： | 113K |
| 代理商： | IRHF54130 |
www.irf.com
3
Radiation Characteristics
IRHF57130
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA V
DS
= 80V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.064 — 0.08
V
GS
= 12V, I
D
=7.4A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.08 — 0.10
V
GS
= 12V, I
D
=7.4A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V V
GS
= 0V, IS = 11.7A
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHF57130, IRHF53130 and IRHF54130
2. Part number IRHF58130
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 100 100 100 100 100
I
59.8
341 32.5 100 100 100 35 25
Au
82.3
350 28.4 100 100 80
LET
Energy Range
V
DS
(V)
25 —
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VDS
V
Br
I
Au
相关PDF资料 |
PDF描述 |
|---|---|
| IRHF58130 | 30V N-Channel PowerTrench MOSFET |
| IRHF9130 | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A) |
| IRHG3214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHG4214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
| IRHG7214 | RADIATION HARDENED POWER MOSFET THRU-HOLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHF54214SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF54230 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) |
| IRHF54230SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF54234SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF54Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
发布紧急采购，3分钟左右您将得到回复。