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参数资料
| 型号： | IRHM4250 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（对254AA） |
| 文件页数： | 3/12页 |
| 文件大小： | 271K |
| 代理商： | IRHM4250 |
www.irf.com
3
Radiation Characteristics
IRHM7250, JANSR2N7269
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 200 — 200 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 50 μA V
DS
=160V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.094 — 0.149
V
GS
= 12V, I
D
=16A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.10 — 0.155
V
GS
= 12V, I
D
=16A
On-State Resistance (TO-254AA)
V
SD
Diode Forward Voltage
— 1.4 — 1.4 V V
GS
= 0V, IS = 26A
100K Rads(Si)
1
600 to 1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHM7250 (JANSR2N7269)
2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
0
50
100
150
200
0
-5
-10
-15
-20
VGS
V
Cu
Br
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@
V
GS
=0V @
V
GS
=-5V @
V
GS
=-10V @
V
GS
=-15V @
V
GS
=-20V
Cu
28
285 43 190 180 170 125 —
Br
36.8
305 39 100 100 100 50 —
LET
Energy Range
V
DS(V)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHM7250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM8250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| IRHM3260 | RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) |
| IRHM4260 | RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM4260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM4450 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM450 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11.5A I(D) | TO-254AA |
| IRHM4Z60 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM53064 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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