参数资料
型号: IRHM54260
厂商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE
中文描述: 抗辐射功率MOSFET的通孔
文件页数: 7/9页
文件大小: 116K
代理商: IRHM54260
www.irf.com
7
Pre-Irradiation
IRHM57260
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
-V
D D
DRIVER
A
15V
20V
GS
.
25
50
75
100
125
150
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E
ID
16A
22A
35A
TOP
BOTTOM
相关PDF资料
PDF描述
IRHM57260 RADIATION HARDENED POWER MOSFET THRU-HOLE
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