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参数资料
| 型号： | IRHM8064 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL |
| 中文描述： | 晶体管N沟道 |
| 文件页数： | 1/4页 |
| 文件大小： | 121K |
| 代理商： | IRHM8064 |
Product Summary
Part Number
IRHM7064
IRHM8064
BV
DSS
60V
60V
R
DS(on)
0.021
0.021
I
D
35A*
35A*
Features:
Radiation Hardened up to 1 x 10
6
Rads (Si)
I
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Electrically Isolated
I
Ceramic Eyelets
I
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
IRHM7064, IRHM8064
35*
35*
284
250
2.0
±20
500
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
35
25
4.5
-55 to 150
9.3 (typical)
g
N-CHANNEL
MEGA RAD HARD
Provisional Data Sheet No. PD-9.1564
60 Volt, 0.021
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology HEXFETs
demonstrate virtual immunity to SEE failure. Addition-
ally, under
identical
pre- and post-radiation test condi-
tions, International Rectifier’s RAD HARD HEXFETs
retain
identical
electrical specifications up to 1 x 10
5
Rads
(Si) total dose. No compensation in gate drive circuitry is
required. These devices are also capable of surviving
transient ionization pulses as high as 1 x 10
12
Rads (Si)/
Sec, and return to normal operation within a few micro-
seconds. Since the RAD HARD process utilizes Interna-
tional Rectifier’s patented HEXFET technology, the user
can expect the highest quality and reliability in the indus-
try.
RAD HARD HEXFET transistors also feature all of the well-
established advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
IRHM7064
IRHM8064
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Pre-Radiation
Notes: See page 4
*Current is limited by pin diameter
o
C
A
300 (0.063 in (1.6mm) from case for 10 sec.)
Next Data Sheet
Index
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相关PDF资料 |
PDF描述 |
|---|---|
| IRHM7264SE | TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*) |
| IRHM7360 | REPETITIVE AVALANCHE AND dv/dt RATED |
| IRHM8360 | REPETITIVE AVALANCHE AND dv/dt RATED |
| IRHM7360SE | TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A) |
| IRHM7450 | REPETITIVE AVALANCHE AND dv/dt RATED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM8130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM8130D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-254VAR |
| IRHM8130U | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-254VAR |
| IRHM8150 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM8150D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 34A I(D) | TO-254VAR |
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