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参数资料
| 型号： | IRHM8064 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL |
| 中文描述： | 晶体管N沟道 |
| 文件页数： | 3/4页 |
| 文件大小： | 121K |
| 代理商： | IRHM8064 |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
48
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
48
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
140
800
—
—
—
—
—
—
0.8
140
160
—
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
60
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
60
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
uses two radiation environments.
IRHM7064, IRHM8064 Devices
Radiation Characteristics
Table 1. Low Dose Rate
Parameter
IRHM7064
100K Rads (Si) 1000K Rads (Si)
Units
min.
max.
min.
100
—
100
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.021
—
IRHM8064
Test Conditions
max.
—
4.5
100
-100
50
0.029
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
= 35A
nA
μ
A
V
SD
—
3.0
—
3.0
V
TC = 25°C, IS = 35A,V
GS
= 0V
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1, column
1, IRHM7064. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are
used.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC pa-
rameters.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
To Order
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