Product Summary
Part Number
BVDSS
RDS(on)
ID
IRHM7360SE
400V
0.20
22A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
PD - 91224C
Pre-Irradiation
400Volt, 0.20
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Addi-
tionally, under identical pre- and post-radiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
oC
A
REPETITIVE AVALANCHE AND dv/dt RATED
IRHM7360SE
HEXFET TRANSISTOR
10/13/98
Absolute Maximum Ratings
Parameter
IRHM7360SE
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
22
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
14
IDM
Pulsed Drain Current
88
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
22
A
EAR
Repetitive Avalanche Energy
25
mJ
dv/dt
Peak Diode Recovery dv/dt
3.0
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
www.irf.com
1