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参数资料
| 型号： | IRHM7460SESCS |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件页数： | 1/8页 |
| 文件大小： | 131K |
| 代理商： | IRHM7460SESCS |
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRHM7460SE
500V
0.32
18A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Parameter
IRHM7460SE
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
18
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
11.7
IDM
Pulsed Drain Current
72
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
18
A
EAR
Repetitive Avalanche Energy
25
mJ
dv/dt
Peak Diode Recovery dv/dt
3.8
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10 sec.)
Weight
9.3 (typical)
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
PD - 91394D
Pre-Irradiation
500Volt, 0.32
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under identical pre- and post-radiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments.
oC
A
REPETITIVE AVALANCHE AND dv/dt RATED
IRHM7460SE
HEXFET TRANSISTOR
10/9/98
www.irf.com
1
相关PDF资料 |
PDF描述 |
|---|---|
| IRHM7460SEU | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRKH230-20D32 | 510 A, 2000 V, SCR |
| IRKH41/04APBF | 70.65 A, 400 V, SCR, TO-240AA |
| IRKH41/04AS90PBF | 70.65 A, 400 V, SCR, TO-240AA |
| IRKH41/08 | 100 A, 800 V, SCR, TO-240AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM7C50SE | 制造商:IRF 制造商全称:International Rectifier 功能描述:TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A) |
| IRHM7Z60 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM7Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM8054 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM8054D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-254VAR |
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