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参数资料
| 型号： | IRHM7460SESCS |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件页数： | 2/8页 |
| 文件大小： | 131K |
| 代理商： | IRHM7460SESCS |
IRHM7460SE Device
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.66
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
—
0.32
VGS = 12V, ID = 11.7A
On-State Resistance
—
0.36
VGS = 12V, ID = 18A
VGS(th)
Gate Threshold Voltage
2.5
—
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
6.0
—
S ( )VDS > 15V, IDS = 11.7A
IDSS
Zero Gate Voltage Drain Current
—
50
VDS= 0.8 x Max Rating,VGS=0V
—
250
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
180
VGS = 12V, ID = 18A
Qgs
Gate-to-Source Charge
—
30
nC
VDS = Max Rating x 0.5
Qgd
Gate-to-Drain (‘Miller’) Charge
—
95
td(on)
Turn-On Delay Time
—
29
VDD = 250V, ID = 18A,
tr
Rise Time
—
93
RG = 2.35
td(off)
Turn-Off Delay Time
—
90
tf
Fall Time
—
59
LD
Internal Drain Inductance
—
8.7
—
LS
Internal Source Inductance
—
8.7
—
Ciss
Input Capacitance
—
3500
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
730
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
260
—
nA
nH
ns
Measured from drain lead,
6mm (0.25 in) from package
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
Modified MOSFET symbol show-
ing the internal inductances.
A
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
18
Modified MOSFET symbol showing the integral
ISM
Pulse Source Current (Body Diode)
——
72
reverse p-n junction rectifier.
VSD
Diode Forward Voltage
—
1.8
V
Tj = 25°C, IS = 18A, VGS = 0V
trr
Reverse Recovery Time
—
800
ns
Tj = 25°C, IF = 18A, di/dt ≤ 100A/s
QRR
Reverse Recovery Charge
—
16
CVDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
0.50
RthCS
Case-to-Sink
—
0.21
—
°C/W
RthJA
Junction-to-Ambient
—
48
Typical socket mount
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