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参数资料
| 型号： | IRHM7460SESCS |
| 元件分类： | JFETs |
| 英文描述： | 18 A, 500 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件页数： | 4/8页 |
| 文件大小： | 131K |
| 代理商： | IRHM7460SESCS |
IRHM7460SE Device
Pre-Irradiation
4
www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
,
Drain-to-Source
On
Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
12V
18A
0.01
0.1
1
10
100
0.1
1
10
100
20us PULSE WIDTH
T = 25 C
J
o
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V
, Drain-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
DS
D
5.0V
0.1
1
10
100
0.1
1
10
100
20us PULSE WIDTH
T = 150 C
J
o
TOP
BOTTOM
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
V
, Drain-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
DS
D
5.0V
V
= 50V
20s PULSE WIDTH
DS
0.1
1
10
100
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
V
, Gate-to-Source Voltage (V)
I
,
Drain-to-Source
Current
(A)
GS
D
T = 25 C
J
o
T = 150 C
J
o
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