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| 型号： | IRHM9230 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d-为200V，的Rds（on）\u003d 0.8ohm，身份证\u003d- 6.5A） |
| 文件页数： | 1/4页 |
| 文件大小： | 201K |
| 代理商： | IRHM9230 |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRHM9230
-200V
0.8
-6.5A
Features:
I
Radiation Hardened up to 1 x 10
5
Rads (Si)
I
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Ceramic Eyelets
I
Electrically Isolated
Provisional Data Sheet No. PD-9.1395
Pre-Radiation
Notes: See page 4
-200 Volt, 0.8
, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications
up to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of Inter-
national Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can ex-
pect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weap-
ons environments.
o
C
A
Absolute Maximum Ratings
Parameter
Continuous Drain Current
IRHM9230
-6.5
-4.1
-26
75
0.2
±20
330
-6.5
7.5
-5.0
-55 to 150
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (0.063 in. (1 .6mm) from case for 10s)
9.3 (typical)
g
IRHM9230
P-CHANNEL
RAD HARD
REPETETIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
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