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| 型号： | IRHM9230 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d-为200V，的Rds（on）\u003d 0.8ohm，身份证\u003d- 6.5A） |
| 文件页数： | 3/4页 |
| 文件大小： | 201K |
| 代理商： | IRHM9230 |
IRHM9230
100K Rads (Si)
min.
-200
-2.0
—
—
—
—
Parameter
Units
Test Conditions
max.
—
-4.0
-100
100
-25
0.8
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -4.1A
μA
V
SD
—
-5.0
V
T
C
= 25°C, I
S
= -6.5A,V
GS
= 0V
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a VDSS bias
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 10
5
Rads (Si) are identical and are
presented in Table 1. The values in Table 1 will be met
for either of the two low dose rate test circuits that are
used.
Radiation Performance of P-Channel Rad
Hard HEXFETs
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as stated
in MIL-PRF-19500 Group D. International Rectifier P-
Channel radiation hardened HEXFETs have been
characterized in heavy ion Single Event Effects
environment and the results are shown in Table
3.
IRHM9230 Device
Radiation Characteristics
Table 2. High Dose Rate
10
11
Rads (Si)/sec10
12
Rads (Si)/sec
Min. Typ Max. Min.Typ. Max. Units
—
—
-160
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
-160
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
1
-100
-800
—
—
—
—
—
—
20
-100
-160
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
-200
V
GS
Bias
(V)
5
Parameter
BVDSS
Typ.
-200
Units
V
Ion
Ni
V
nA
Table 1. Low Dose Rate
To Order
Next Data Sheet
Index
Previous Datasheet
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