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参数资料
| 型号： | IRHM93150 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) |
| 中文描述： | 抗辐射功率MOSFET的通孔（对254AA） |
| 文件页数： | 2/8页 |
| 文件大小： | 136K |
| 代理商： | IRHM93150 |
IRHM9150
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance — — 0.085
VGS = -12V, ID = -22A
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
11
IDSS
Zero Gate Voltage Drain Current
Min
-100
—
Typ
—
-0.093
Max Units
—
—
Test Conditions
VGS = 0V, ID =-1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
V
V/°C
—
—
0.080
VGS = -12V, ID = -14A
—
—
—
—
-4.0
—
-25
-250
V
VDS = VGS, ID = -1.0mA
VDS >-15V, IDS = -14A
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -22A
VDS = -50V
S (
)
—
—
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
200
35
48
40
170
190
190
—
nC
VDD = -50V, ID = -22A,
VGS =-12V, RG = 2.35
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4300
1100
310
—
—
—
VGS = 0V, VDS = -25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJA
Junction-to-Ambient
RthCS
Case-to-Sink
Min Typ Max
—
—
—
—
—
0.21
Units
Test Conditions
0.83
48
—
°C/W
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
-22
-88
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
300
1.5
V
nS
μC
T
j
= 25°C, IS = -22A, VGS = 0V
Tj = 25°C, IF = -22A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHM9160 | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A) |
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| IRHM9250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
| IRHM93250 | RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHM93160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM93230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHM93250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHM93260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHMB53064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) |
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