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参数资料
| 型号： | IRHM93260 |
| 英文描述： | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package |
| 中文描述： | - 200伏300kRad高可靠性单P沟道MOSFET的工贸硬化在TO - 254AA封装 |
| 文件页数： | 7/8页 |
| 文件大小： | 140K |
| 代理商： | IRHM93260 |
IRHM9130, IRHM93130 Device
www.irf.com
7
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-12V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
-12V
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
-12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
Pre-Irradiation
25
50
75
100
125
150
0
100
200
300
400
Starting T , Junction Temperature( C)
E
ID
-4.9A
-7.0A
-11A
TOP
BOTTOM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHMB53064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) |
| IRHMB53Z60 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) |
| IRHMB54064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) |
| IRHMB54Z60 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) |
| IRHMB57064 | 制造商:IRF 制造商全称:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA) |
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