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参数资料
| 型号： | IRHN9250 |
| 英文描述： | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | - 200伏100kRad高可靠性单P沟道工贸硬化的贴片MOSFET的- 1封装 |
| 文件页数： | 1/8页 |
| 文件大小： | 126K |
| 代理商： | IRHN9250 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
PCKG Mounting Surface Temp.
Weight
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
-14
-9.0
-56
150
1.2
±20
500
-14
15
-41
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
2.6 (typical)
g
PD - 91300C
Pre-Irradiation
International Rectifier’s RADHard HEXFET
TM
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
REF: MIL-PRF-19500/662
RAD Hard
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHN9250 100K Rads (Si)
0.315
-14A
IRHN93250 300K Rads (Si)
0.315
-14A
JANSR2N7423U
200V, P-CHANNEL
HEXFET
T
ECHNOLOGY
02/20/03
www.irf.com
1
SMD-1
QPL Part Number
JANSR2N7423U
JANSF2N7423U
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
For footnotes refer to the last page
IRHN9250
相关PDF资料 |
PDF描述 |
|---|---|
| IRHN93130 | -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| IRHN93150 | -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| IRHN93230 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| IRHN93250 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| JANSF2N7423U | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHN93130 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN93150 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHN93230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHN93250 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA3064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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