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参数资料
| 型号： | IRHN9250 |
| 英文描述： | -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
| 中文描述： | - 200伏100kRad高可靠性单P沟道工贸硬化的贴片MOSFET的- 1封装 |
| 文件页数： | 8/8页 |
| 文件大小： | 126K |
| 代理商： | IRHN9250 |
IRHN9250, JANSR2N7423U
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -50V, starting TJ = 25°C, L=
5.1mH
Peak IL = -14A, VGS = -12V
ISD
≤
-14A, di/dt
≤
-600A/
μ
s,
VDD
≤
-200V, TJ
≤
150°C
Foot Notes:
Case Outline and Dimensions — SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 02/03
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| JANSF2N7423U | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package |
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