参数资料
型号: IRHN7250SE
英文描述: 200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-1 package
中文描述: 200伏100kRad高可靠性单N通道看到一贴片MOSFET的硬化- 1封装
文件页数: 5/8页
文件大小: 126K
代理商: IRHN7250SE
www.irf.com
5
Pre-Irradiation
IRHN7250SE
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
80
120
160
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
26A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
1
10
100
1000
0.4
0.8
1.2
1.6
2.0
2.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25°
°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
相关PDF资料
PDF描述
IRHN8054 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 42A I(D) | LLCC
IRHN9250 -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
IRHN93130 -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
IRHN93150 -100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
IRHN93230 -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-1 package
相关代理商/技术参数
参数描述
IRHN7250SESCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHN7450 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHN7450SCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHN7450SE 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk
IRHN7450SESCS 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk