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参数资料
| 型号： | IRHN8054 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 42A I(D) | LLCC |
| 中文描述： | 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 42A条（丁）| LLCC |
| 文件页数： | 5/8页 |
| 文件大小： | 247K |
| 代理商： | IRHN8054 |
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C
C
=
C
+ C
oss
ds
gd
V
C
C
=
=
=
0V,
C
C
gd
f = 1MHz
+ C
gd ,
C SHORTED
GS
iss
rss
gs
C
iss
C
oss
C
rss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
I =
35A
SEE FIGURE
FOR TEST CIRCUIT
13
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
0.4
1.0
V ,Source-to-Drain Voltage (V)
1.6
2.2
2.8
3.4
4.0
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
1000
1
10
100
1000
BY R
DS(on)
OPERATION IN THIS AREA LIMITED
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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