参数资料
型号: IRHNA54Z60
厂商: International Rectifier
英文描述: 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET)
中文描述: 30V的N通道表面安装抗辐射功率MOSFET(30V的,表贴型抗辐射功率?沟道MOSFET的)
文件页数: 4/8页
文件大小: 105K
代理商: IRHNA54Z60
IRHNA57Z60
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
8.0V
6.0V
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
5.0
5.5
V , Gate-to-Source Voltage (V)
6.0
6.5
7.0
7.5
8.0
VDS
20μs PULSE WIDTH
I
D
T = 25 C
T = 150 C
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
12V
75 A
25V
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IRHNA53Z60 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET)
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