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参数资料
| 型号： | IRHNA57Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| 中文描述： | 30V的N通道表面安装抗辐射功率MOSFET（30V的，表贴型抗辐射功率?沟道MOSFET的） |
| 文件页数： | 1/8页 |
| 文件大小： | 105K |
| 代理商： | IRHNA57Z60 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
300
2.4
±20
500
75
30
0.83
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA57Z60
30V, N-CHANNEL
TECHNOLOGY
R
5
4/10/00
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
SMD-2
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA57Z60 100K Rads (Si) 0.0035
75*A
IRHNA53Z60 300K Rads (Si) 0.0035
75*A
IRHNA54Z60 600K Rads (Si) 0.0035
75*A
IRHNA58Z60 1000K Rads (Si) 0.0040
75*A
I
D
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
PD - 91787E
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA58Z60 | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| IRHNA57264SE | Surface Mount (SMD-2) Radiation Hardened Power MOSFET(表贴型抗辐射功率MOSFET) |
| IRHNA593064 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA597064 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA593260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA57Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA58064 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA58160 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA58260 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA58Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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