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参数资料
| 型号： | IRHNA57Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表贴型抗辐射功率N沟道MOSFET) |
| 中文描述： | 30V的N通道表面安装抗辐射功率MOSFET（30V的，表贴型抗辐射功率?沟道MOSFET的） |
| 文件页数： | 5/8页 |
| 文件大小： | 105K |
| 代理商： | IRHNA57Z60 |
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5
IRHNA57Z60
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.0
0.5
V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
I
S
V = 0 V
T = 25 C
°
T = 150 C
°
0
25
50
Q , Total Gate Charge (nC)
75
100
125
150
175
200
225
0
5
10
15
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
45 A
V
= 15V
DS
V
= 24V
DS
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
1
10
100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
oss
C
iss
C
rss
Pre-Irradiation
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA57Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA58064 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA58160 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA58260 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA58Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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