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参数资料
| 型号： | IRHNA58160 |
| 厂商： | International Rectifier |
| 英文描述： | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| 中文描述： | 表面安装抗辐射功率MOSFET（表贴型抗辐射功率马鞍山场效应管） |
| 文件页数： | 3/8页 |
| 文件大小： | 101K |
| 代理商： | IRHNA58160 |
www.irf.com
3
IRHNA57160
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 100 — 100 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA
R
DS(on)
Static Drain-to-Source
— 0.013 — 0.014
V
GS
= 12V, I
D
=45A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.012 — 0.013
V
GS
= 12V, I
D
=45A
On-State Resistance (SMD-2)
V
SD
Diode Forward Voltage
— 1.2 — 1.2 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part numbers IRHNA57160, IRHNA53160 and IRHNA54160
2. Part number IRHNA58160
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 45A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
36.7
309 39.5 100 100 100 100 100
I
59.8
341 32.5 100 100 100 35 25
Au
82.3
350 28.4 100 100 80
LET
Energy Range
V
DS
(V)
25
—
0
20
40
60
80
100
120
-20
-15
-10
-5
0
VDS
V
Br
I
Au
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA54160 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| IRHNA53260 | 200V, N-CHANNEL |
| IRHNA57060 | 200V, N-CHANNEL |
| IRHNA54260 | 200V, N-CHANNEL |
| IRHNA57260 | 200V, N-CHANNEL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA58260 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA58Z60 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA58Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA593064 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA593064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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