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参数资料
| 型号： | IRHNA58160 |
| 厂商： | International Rectifier |
| 英文描述： | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| 中文描述： | 表面安装抗辐射功率MOSFET（表贴型抗辐射功率马鞍山场效应管） |
| 文件页数： | 5/8页 |
| 文件大小： | 101K |
| 代理商： | IRHNA58160 |
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5
IRHNA57160
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
rss
C
oss
C
iss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
75A
V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
1.8
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
Pre-Irradiation
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
10us
100us
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
OPERATION IN THIS AREA LIMITED
BY RDS(ON)
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA54160 | Surface Mount Radiation Hardened Power MOSFET(表贴型抗辐射功率MOS场效应管) |
| IRHNA53260 | 200V, N-CHANNEL |
| IRHNA57060 | 200V, N-CHANNEL |
| IRHNA54260 | 200V, N-CHANNEL |
| IRHNA57260 | 200V, N-CHANNEL |
相关代理商/技术参数 |
参数描述 |
|---|---|
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| IRHNA593064 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA593064SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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