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参数资料
| 型号： | IRHNA63160 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 2），100V的，N沟道 |
| 文件页数： | 5/8页 |
| 文件大小： | 184K |
| 代理商： | IRHNA63160 |
www.irf.com
5
Pre-Irradiation
IRHNA67160
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
1.0
10
100
1000
IS
VGS = 0V
TJ = 150°C
TJ = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
14000
C
VGS = 0V, f = 1 MHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
1
10
100
1000
ID
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μs
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
0
4
8
12
16
20
VG
VDS = 80V
VDS = 50V
VDS = 20V
ID = 56A
FOR TEST CIRCUIT
SEE FIGURE 13
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