- 您现在的位置：买卖IC网 > PDF目录377522 > IRHNA67160 (International Rectifier) RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL PDF资料下载
参数资料
| 型号： | IRHNA67160 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 2），100V的，N沟道 |
| 文件页数： | 1/8页 |
| 文件大小： | 184K |
| 代理商： | IRHNA67160 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 56*
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
56*
224
250
2.0
±20
462
56
25
5.0
W
W/°C
V
mJ
A
mJ
V/ns
-55 to 150
300 (for 5s)
3.3 (Typical)
g
o
C
A
www.irf.com
1
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA67160 100K Rads (Si) 0.01
IRHNA63160 300K Rads (Si) 0.01
I
D
56A*
56A*
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHNA67160
POWER MOSFET
SURFACE-MOUNT (SMD-2)
Features:
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
SMD-2
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm
2
). Their combination of
very low
RDS(on)
and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
PD - 94299A
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA7Z60 | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体管) |
| IRHNA8Z60 | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体管) |
| IRHNA9260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA93260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNB7260 | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA67160SCS | 制造商:International Rectifier 功能描述:MOSFET, N CHANNEL - Bulk |
| IRHNA67160SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA67164 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R6 - Bulk |
| IRHNA67164SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA67260 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R6 - Bulk |
发布紧急采购，3分钟左右您将得到回复。