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参数资料
| 型号： | IRHNA67160 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 2），100V的，N沟道 |
| 文件页数： | 4/8页 |
| 文件大小： | 184K |
| 代理商： | IRHNA67160 |
IRHNA67160
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
1
10
100
1000
ID
60
μ
s PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
5.0V
5
5.5
6
6.5
7
7.5
8
8.5
9
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID
VDS = 25V
6
0μ
s PULSE WIDTH
TJ = 150°C
TJ = 25°C
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
RD
VGS = 12V
ID = 56A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID
60
μ
s PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
5.0V
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