参数资料
型号: IRHNA7Z60
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
中文描述: 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 75A条(丁)|贴片
文件页数: 4/8页
文件大小: 119K
代理商: IRHNA7Z60
4
www.irf.com
IRHNB7064
Pre-Irradiation
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
°
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
5
6
V , Gate-to-Source Voltage (V)
7
8
9
10
11
12
VDS
20μs PULSE WIDTH
I
D
T = 25 C
T = 150 C
°
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
12V
75A
相关PDF资料
PDF描述
IRHNA8Z60 TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
IRHNA93064 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 48A I(D) | SMT
IRHNA3064 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT
IRHNA3160 TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 51A I(D) | SMT
IRHNA3260 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
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