
International Rectifier’s RAD-HardTM HEXFET
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT(SMD-2)
02/14/07
www.irf.com
1
IRHNA7064
JANSR2N7431U
60V, N-CHANNEL
REF: MIL-PRF-19500/664
RAD-Hard
HEXFET
TECHNOLOGY
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
*Current is limited by package
For footnotes refer to the last page
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
75*
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
56
IDM
Pulsed Drain Current
300
PD @ TC = 25°C
Max. Power Dissipation
300
W
Linear Derating Factor
2.4
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
75*
A
EAR
Repetitive Avalanche Energy
30
mJ
dv/dt
Peak Diode Recovery dv/dt
2.5
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
300 (for 5sec)
Weight
3.3 (Typical)
g
Pre-Irradiation
oC
A
Product Summary
Part Number
Radiation Level
RDS(on)
ID
QPL Part Number
IRHNA7064
100K Rads (Si)
0.015
75A* JANSR2N7431U
IRHNA3064
300K Rads (Si)
0.015
75A* JANSF2N7431U
IRHNA4064
500K Rads (Si)
0.015
75A* JANSG2N7431U
IRHNA8064 1000K Rads (Si)
0.015
75A* JANSH2N7431U
SMD-2
PD - 91416D