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参数资料
| 型号： | IRHNA8064 |
| 元件分类： | JFETs |
| 英文描述： | 75 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, SMD-3, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 177K |
| 代理商： | IRHNA8064 |
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IRHNA7064, JANSR2N7431U
Pre-Irradiation
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
75*
ISM
Pulse Source Current (Body Diode)
—
300
VSD Diode Forward Voltage
—
1.5
V
Tj = 25°C, IS = 75A, VGS = 0V
trr
Reverse Recovery Time
—
360
ns
Tj = 25°C, IF = 75A, di/dt ≤ 100A/s
QRR Reverse Recovery Charge
—
3.1
C
VDD ≤ 50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
—
0.42
RthJ-PCB
Junction-to-PC board
—
1.6
—
Soldered to a 1” sq. copper-clad board
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60
—
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown
—
0.056
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
0.015
VGS = 12V, ID = 56A
Resistance
—
0.018
VGS = 12V, ID = 75A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
18
—
S
VDS > 15V, IDS = 56A
IDSS
Zero Gate Voltage Drain Current
—
25
VDS= 48V ,VGS=0V
—
250
VDS = 48V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
VGS = -20V
Qg
Total Gate Charge
—
270
VGS =12V, ID = 75A
Qgs
Gate-to-Source Charge
—
60
nC
VDS = 30V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
110
td(on)
Turn-On Delay Time
—
27
VDD =30V, ID = 75A
tr
Rise Time
—
120
VGS =12V, RG = 2.35
td(off)
Turn-Off Delay Time
—
120
tf
Fall Time
—
100
LS + LD
Total Inductance
—
4.0
—
Ciss
Input Capacitance
—
4900
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
2800
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
860
—
nA
nH
ns
A
Measured from the center of
drain pad to center of source pad
°C/W
*Current is limited by package
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
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