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参数资料
| 型号： | IRHNA8160 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL |
| 中文描述： | 晶体管N沟道 |
| 文件页数： | 3/4页 |
| 文件大小： | 161K |
| 代理商： | IRHNA8160 |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
80
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
80
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
160 A/μsec Rate of rise of photo-current
—
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
140
—
—
—
800
—
—
—
0.5
140
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
100
V
GS
Bias
(V)
-5
Parameter
Typ.
Units
Ion
BVDSS
100
V
Ni
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-
FETs are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
IRHNA7160, IRHNA8160 Devices
Radiation Characteristics
Table 1. Low Dose Rate
Parameter
IRHNA7160 IRHNA8160
100K Rads (Si) 1000K Rads (Si)
Units
min.
max.
min.
100
—
100
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.045
—
Test Conditions
max.
—
4.5
100
-100
50
0.062
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0 mA
V
GS
= V
DS
, I
D
= 1.0 mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= 12V, I
D
=32.5A
nA
μ
A
V
SD
—
1.8
—
1.8
V
TC = 25°C, IS = 51A,V
GS
= 0V
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
V
DSS
bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 10
5
Rads (Si)
are identical and are presented in Table 1, column
1, IRHNA7160. The values in Table 1 will be met for
either of the two low dose rate test circuits that are
used. Both pre- and post-radiation performance are
tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level
of 1 x 10
5
Rads (Si), no change in limits are speci-
fied in DC parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
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