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参数资料
| 型号： | IRHNA8260 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL |
| 中文描述： | 晶体管N沟道 |
| 文件页数： | 1/4页 |
| 文件大小： | 161K |
| 代理商： | IRHNA8260 |
Product Summary
Part Number
IRHNA7260
IRHNA8260
BV
DSS
200V
200V
R
DS(on)
0.070
0.070
I
D
43A
43A
Features:
n
Radiation Hardened up to 1 x 10
6
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Lightweight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNA7260, IRHNA8260
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
43
27
172
300
2.4
±20
500
43
30
5.0
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5 sec.)
3.3 (typical)
g
N-CHANNEL
MEGA RAD HARD
Provisional Data Sheet No. PD-9.1397
Pre-Radiation
200 Volt, 0.070
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of parallel-
ing and temperature stability of the electrical param-
eters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
o
C
A
IRHNA7260
IRHNA8260
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Next Data Sheet
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