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| 型号： | IRHNA8064 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL |
| 中文描述： | 晶体管N沟道 |
| 文件页数： | 1/4页 |
| 文件大小： | 130K |
| 代理商： | IRHNA8064 |
Product Summary
Part Number
IRHNA7064
IRHNA8064
BV
DSS
60V
60V
R
DS(on)
0.015
0.015
I
D
75A*
75A*
Features:
Radiation Hardened up to 1 x 10
6
Rads (Si)
I
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Surface Mount
I
Lightweight
I
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNA7064, IRHNA8064
75*
56
356
300
2.0
±20
500
75*
30
4.5
-55 to 150
-55 to150
300 (for 5 sec.)
3.3 (typical)
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
g
N-CHANNEL
MEGA RAD HARD
Provisional Data Sheet No. PD-9.1416
60 Volt, 0.015
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
IRHNA7064
IRHNA8064
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Pre-Radiation
Notes: See page 4
*Current is limited by pin diameter
o
C
A
Next Data Sheet
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