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参数资料
| 型号： | IRHNA9160 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.087ohm，身份证\u003d- 38A条） |
| 文件页数： | 1/4页 |
| 文件大小： | 153K |
| 代理商： | IRHNA9160 |
Product Summary
Part Number
IRHNA9160
BV
DSS
-100V
R
DS(on)
0.087
I
D
-38A
Features:
Radiation Hardened up to 1 x 10
5
Rads (Si)
I
Single Event Burnout (SEB) Hardened
I
Single Event Gate Rupture (SEGR) Hardened
I
Gamma Dot (Flash X-Ray) Hardened
I
Neutron Tolerant
I
Identical Pre- and Post-Electrical Test Conditions
I
Repetitive Avalanche Rating
I
Dynamic dv/dt Rating
I
Simple Drive Requirements
I
Ease of Paralleling
I
Hermetically Sealed
I
Surface Mount
I
Lightweight
I
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNA9160
-38
-24
-152
300
2.4
±20
500
-38
Units
ID @ VGS = -12V, TC = 25
o
C
ID @ VGS = -12V, TC = 100
o
C
IDM
PD @ TC = 25
o
C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
30
-5.5
-55 to 150
300 (for 5 sec.)
3.3 (typical)
g
P-CHANNEL
RAD HARD
Provisional Data Sheet No. PD-9.1433
Pre-Radiation
-100Volt, 0.087
, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
rads (Si). Under
identical
pre- and post-radiation
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications
up to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 10
12
Rads
(Si)/Sec, and return to normal operation within a few micro-
seconds. Single Event Effect (SEE) testing of International
Rectifier’s P-Channel RAD HARD HEXFETs has demon-
strated virtual immunity to SEE failure. Since the RAD HARD
process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and reli-
ability in the industry.
P- Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters. They are
well-suited for applications such as switching power sup-
plies, motor controls, inverters, choppers, audio amplifiers
and high-energy pulse circuits in space and weapons envi-
ronments.
o
C
A
IRHNA9160
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
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