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参数资料
| 型号： | IRHNA9160 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.087ohm，身份证\u003d- 38A条） |
| 文件页数： | 2/4页 |
| 文件大小： | 153K |
| 代理商： | IRHNA9160 |
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min. Typ. Max. Units
—
—
Test Conditions
0.42
K/W
RthJ-PCB
Junction-to-PC board
—
TBD
—
soldered to a copper-clad PC board
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
F
Min. Typ. Max. Units
—
—
—
—
Test Conditions
-38
-152
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.3
775
5.0
V
ns
μ
C
T
j
= 25
o
C, IS = -38A, VGS = 0V
Tj = 25
o
C, IF = -38A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min.
-100
—
Typ. Max. Units
—
—
-0.13
—
Test Conditions
VGS = 0V, ID = -1.0 mA
Reference to 25
o
C, ID = -1.0 mA
BVDSS
BVDSS/
TJ
V
V/
o
C
RDS(on)
—
—
-2.0
10
—
—
—
—
—
—
—
—
0.087
0.010
-4.0
—
-25
-250
VGS = -12V, ID = -24A
VGS = -12V, ID = -38A
VDS = VGS, ID = -1.0 mA
VDS > -15V, IDS = -24A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125
o
C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -38A
VDS = Max. Rating x 0.5
V
VGS(th)
gfs
IDSS
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
200
50
90
70
240
220
150
—
VDD = -100V, ID = -38A,
RG = 2.35
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7000
2000
500
—
—
—
VGS = 0V, VDS = -25V
f = 1.0 MHz
IRHNA9160 Device
Pre-Radiation
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
nA
A
Modified MOSFET
symbol showing the
internal inductances.
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