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参数资料
| 型号： | IRHNA9160 |
| 厂商： | International Rectifier |
| 英文描述： | TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A) |
| 中文描述： | 晶体管P沟道（BVdss \u003d- 100V的，的Rds（on）\u003d 0.087ohm，身份证\u003d- 38A条） |
| 文件页数： | 3/4页 |
| 文件大小： | 153K |
| 代理商： | IRHNA9160 |
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min. Typ Max. Min. Typ. Max.
Units
—
—
-80
—
Parameter
Drain-to-Source Voltage
Test Conditions
VDSS
—
-80
V
Applied drain-to-source voltage
during gamma-dot
Peak radiation induced photo-current
A/
μ
sec Rate of rise of photo-current
μ
H
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
-100
-800
—
—
—
—
—
—
0.5
-100
-160
—
—
—
—
A
Table 3. Single Event Effects
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(
μ
m)
~41
V
DS
Bias
(V)
-100
V
GS
Bias
(V)
5
Parameter
Typ.
Units
Ion
BVDSS
-100
V
Ni
Radiation Performance of P-Channel Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier uses
two radiation environments.
IRHNA9160 Device
Radiation Characteristics
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a stan-
dard gate voltage of -12 volts per note 6 and a V
DSS
bias condition equal to 80% of the device rated volt-
age per note 7. Pre- and post-radiation limits of the de-
vices irradiated to 1 x 10
5
Rads (Si) are identical and
are presented in Table 1. The values in Table 1 will be
met for either of the two low dose rate test circuits
that are used. Both pre- and post-radiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison. It should be noted that at a radiation level of
1 x 10
5
Rads (Si), no change in limits are specified in
DC parameters.
High dose rate testing may be done on a special re-
quest basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International Rec-
tifier radiation hardened HEXFETs have been char-
acterized in heavy ion Single Event Effects
environment and the results are shown in Table 3.
Table 1. Low Dose Rate
Parameter
IRHNA9160
100K Rads (Si)
Units
min. max.
-100 —
-2.0 -4.0
— -100
— 100
— -25
— 0.087
Test Conditions
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -24A
nA
μ
A
V
SD
— -3.3
V
TC = 25°C, IS = -38A,V
GS
= 0V
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