参数资料
型号: IRHNA8064
厂商: International Rectifier
英文描述: TRANSISTOR N-CHANNEL
中文描述: 晶体管N沟道
文件页数: 4/4页
文件大小: 130K
代理商: IRHNA8064
IRHNA7064, IRHNA8064 Devices
Radiation Characteristics
Case Outline and Dimensions – SMD2
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (I
Peak IL = 75A, VGS = 12V
ISD
75A, di/dt
170 A/
μ
s,
VDD
BVDSS, TJ
150°C
Suggested RG = 2.35
Pulse width
300
μ
s; Duty Cycle
2%
K/W = °C/W
W/K = W/°C
2
) * [BVDSS/(BVDSS-VDD)]
Total Dose Irradiation with VGS Bias.
+12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
WORLD HEADQUARTERS:
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EUROPEAN HEADQUARTERS:
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IR CANADA:
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IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/96
Legend
1 - Drain
2 - Source
3 - Gate
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4 Dimension includes metallization flash
5 Dimension does not include metallization flash
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