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参数资料
| 型号： | IRHNA8Z60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 75A条（丁）|贴片 |
| 文件页数： | 5/8页 |
| 文件大小： | 119K |
| 代理商： | IRHNA8Z60 |
www.irf.com
5
Pre-Irradiation
IRHNB7064
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
50
Q , Total Gate Charge (nC)
100
150
200
250
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
35A
75A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
5.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25 C
°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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|---|---|
| IRHNA8Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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