参数资料
型号: IRHNA8Z60
厂商: International Rectifier
英文描述: 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体管)
中文描述: 30Volt,0.009Ω,RAD数据通信硬的HEXFET(30V的,0.009Ω,抗辐射?沟道的HEXFET晶体管)
文件页数: 5/8页
文件大小: 127K
代理商: IRHNA8Z60
IRHNA7Z60, IRHNA8Z60 Devices
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
3000
6000
9000
12000
15000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
oss
C
iss
C
rss
1
10
100
1000
0.0
1.0
V ,Source-to-Drain Voltage (V)
2.0
3.0
4.0
5.0
6.0
I
S
V = 0 V
T = 25 C
T = 150 C
°
0
100
Q , Total Gate Charge (nC)
200
300
400
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
75A
V
= 15V
DS
V
= 24V
DS
Pre-Irradiation
10
100
1000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
100us
1ms
10ms
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