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参数资料
| 型号： | IRHNB8260 |
| 厂商： | International Rectifier |
| 英文描述： | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 200Volt，0.070Ω，N沟道美佳RAD数据通信硬的HEXFET（为200V，0.070Ω，美佳抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 1/8页 |
| 文件大小： | 110K |
| 代理商： | IRHNB8260 |
Product Summary
Part Number
IRHNB7260
IRHNB8260
BV
DSS
200V
200V
R
DS(on)
0.070
0.070
I
D
43A
43A
Features:
Radiation Hardened up to 1 x 10
6
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNB7260, IRHNB8260
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
43
27
172
300
2.4
±20
500
43
30
5.7
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5 Sec.)
3.5 (typical)
g
N-CHANNEL
MEGA RAD HARD
PD - 91798
Pre-Irradiation
200Volt, 0.070
, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate immunity to SEE failure. Ad-
ditionally, under
identical
pre- and post-irradiation test
conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal op-
eration within a few microseconds. Since the RAD
HARD process utilizes International Rectifier’s pat-
ented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits in space and weapons environments
o
C
A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
IRHNB7260
IRHNB8260
8/25/98
www.irf.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNB8Z60 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package |
| IRHNJ3130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNJ3130SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNJ3230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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