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参数资料
| 型号： | IRHNB8260 |
| 厂商： | International Rectifier |
| 英文描述： | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 200Volt，0.070Ω，N沟道美佳RAD数据通信硬的HEXFET（为200V，0.070Ω，美佳抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 5/8页 |
| 文件大小： | 110K |
| 代理商： | IRHNB8260 |
IRHNB7260, IRHNB8260 Devices
www.irf.com
5
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
100
1000
0.0
0.5
V ,Source-to-Drain Voltage (V)
1.0
1.5
2.0
2.5
3.0
3.5
I
S
V = 0 V
T = 150 C
°
T = 25 C
°
0
40
80
120
160
200
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
43 A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
Pre-Irradiation
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
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|---|---|
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