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参数资料
| 型号： | IRHNA9260 |
| 厂商： | International Rectifier |
| 英文描述： | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| 中文描述： | 抗辐射功率MOSFET表面贴装系统（SMD - 2） |
| 文件页数： | 4/8页 |
| 文件大小： | 118K |
| 代理商： | IRHNA9260 |
IRHNA9260, JANSR2N7426U
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10
100
1000
1
10
100
20μs PULSE WIDTH
T = 25 C
°
TOP
BOTTOM
VGS
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
10
100
1000
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
-10V
-7.0V
-5.0V
-V , Drain-to-Source Voltage (V)
-
D
-5.0V
10
100
1000
5.0
6.0
7.0
8.0
9.0
10.0
VDS
20μs PULSE WIDTH
-V , Gate-to-Source Voltage (V)
-
D
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
-12V
-29A
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