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参数资料
| 型号： | IRHNB7264SE |
| 厂商： | International Rectifier |
| 英文描述： | 250Volt, 0.11Ω, (SEE) RAD HARD HEXFET(250V, 0.11Ω,单事件效应抗辐射 HEXFET晶体管) |
| 中文描述： | 250Volt，0.11Ω（见）RAD数据通信硬的HEXFET（250V，0.11Ω，单事件效应抗辐射的HEXFET晶体管） |
| 文件页数： | 5/8页 |
| 文件大小： | 140K |
| 代理商： | IRHNB7264SE |
IRHNB7264SE Device
www.irf.com
5
Fig 7.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1
10
100
0
2000
4000
6000
8000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
31A
V
= 125V
DS
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25°
°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
Pre-Irradiation
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